advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 650v fast switching characteristic r ds(on) 0.62 simple drive requirement i d 10a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice 10 40 31.3 6.8 50 -55 to 150 parameter 30 rating 650 rohs-compliant product parameter AP10N70I-A 200810311 1 storage temperature range -55 to 150 g d s the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. g d s to-220cfm(i) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1.0ma 650 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =5.0a - - 0.62 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =5a - 16 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 25 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =10a - 36 58 nc q gs gate-source charge v ds =480v - 8.3 - nc q gd gate-drain ("miller") charge v gs =10v - 11.5 - nc t d(on) turn-on delay time 3 v dd =300v - 15 - ns t r rise time i d =10a - 20 - ns t d(off) turn-off delay time r g =10 ? v gs =10v - 52 - ns t f fall time r d =30 -23- ns c iss input capacitance v gs =0v - 1950 3120 pf c oss output capacitance v ds =15v - 630 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf r g gate resistance f=1.0mhz - 2 3 ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP10N70I-A 0.8 0.9 1 1.1 1.2 1.3 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 4 8 12 16 20 0 5 10 15 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.0v 4.5v v g =4.0v 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 0 25 50 75 100 125 150 t j , junction temperature ( o c ) normalized r ds(on) i d =5a v g =10v 0 4 8 12 16 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 6 .0v 5 .0v 4.5v v g =4 0v 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP10N70I-A 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 4 8 12 16 0 204060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =320v v ds =400v v ds =480v 0 800 1600 2400 3200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
package outline : to-220cfm millimeters min nom max a 4.30 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l 12.00 --- 15.00 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. ywwsss package code 10n70i part number date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 option a l3 l
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